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Model No. : | YZPST-KP1000A6500V |
---|---|
Brand Name : | YZPST |
place of origin : | China |
Yangzhou, Jiangsu, China
Penerangan Produk
P/N: YZPST-KP1000A/6500V
Kuasa tinggi thyristo r untuk Fasa Kawalan Aplikasi
Ciri-ciri:
. Semua Strucsu tersebar semula
. Pusat menguatkan konfigurasi ga te
. Dijamin Masa giliran maksimum
. Dv/dt tinggi Keupayaan
. Tekanan dipasang Devi CE
Menyekat - Di luar negeri
VRRM ( 1) |
V DRM ( 1) |
VRSM ( 1) |
6500 |
6500 |
6600 |
Vrrm = voltan terbalik puncak berulang
Vdrm = puncak berulang dari voltan negeri
VRSM = Voltan terbalik puncak yang tidak berulang (2)
Nota:
Semua penilaian ditentukan untuk TJ = 25 OC kecuali
sebaliknya dinyatakan.
(1) Semua penilaian voltan ditentukan untuk bentuk gelombang sinusoidal 50Hz/60ZHz yang digunakan
Julat suhu -40 hingga +125 oC.
(2) 10 msec. maks. lebar nadi
(3) Nilai maksimum untuk TJ = 125 oC.
(4) Nilai minimum untuk linear dan eksponen
Waveshape kepada 80% dinilai VDRM. Pintu terbuka.
TJ = 125 OC.
(5) Nilai tidak berulang.
(6) nilai DI/DT ditubuhkan dalam
Selaras dengan EIA/NIMA Standard RS-397, Seksyen 5-2-2-6. Nilai yang ditakrifkan akan menjadi tambahan kepada yang diperoleh dari litar snubber, yang terdiri daripada kapasitor 0.2 μF dan rintangan 20 ohm selari dengan thristor
di bawah ujian.
Repetitive peak reverse leakage and off state |
IRRM / IDRM |
40 mA 200mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/μsec |
Menjalankan - - di negeri
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Max. Average value of on-state current | IT(AV) | 1000 | A | Sinewave, 180o conduction TC=70 oC | ||
RMS value of on-state current | ITRMS | 1650 | A | Nominal value | ||
Peak one cpstcle surge | ITSM | 18 | kA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
(non repetitive) current | ||||||
I square t | I2t | 1620 | kA2s | |||
Latching current | IL | 1500 | mA | VD = 24 V; RL= 12 ohms | ||
Holding current | IH | 500 | mA | VD = 24 V; I = 2.5 A | ||
Peak on-state voltage | VTM | 2.65 | V | ITM = 1000A; Tvj= 125℃ | ||
Threshold voltage | VTo | 1.24 | V | Tvj= 125℃ | ||
Slope resistance | rT | 1.01 | mΩ | Tvj= 125℃ | ||
Critical rate of rise of on-state current (5, 6) | di/dt | 500 | A/μs | Switching from VDRM < 1500 V, | ||
non-repetitive | ||||||
Critical rate of rise of on-state current (6) | di/dt | - | A/μs | Switching from VDRM < 3500 V |
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
50 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
10 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units |
VGT |
|
- 2.6 - |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0- 125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
10 |
|
V |
|
Dinamik
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
- |
|
μs |
ITM = 1000 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0. 1 μs; tp = 20 μs |
Turn-off time (with VR = -50 V) |
tq |
|
700 |
|
μs |
ITM = 1000 A; di/dt = 1A/μs; VR > 200 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle > 0.01% |
Reverse recovery charge |
Qrr |
|
- |
|
μAs |
ITM = 2000 A; di/dt = 1.5 A/μs; VR > 200V |
Garis besar dan Dimen sions.
Video
Yangzhou, Jiangsu, China
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